Imaging charge-coupled device (CCD) transient response to 17 and 50 MeV proton and heavy-ion irradiation

Author

Lomheim, T.S. ; Shima, R.M. ; Angione, J.R. ; Woodward, W.E. ; Asman, D.J. ; Keller, R.A. ; Schumann, L.W.

Author_Institution

Aerosp. Corp., Los Angeles, CA, USA

Volume

37

Issue

6

fYear

1990

fDate

12/1/1990 12:00:00 AM

Firstpage

1876

Lastpage

1885

Abstract

The results of irradiating a high-resolution, large-area, silicon charge-coupled device (CCD) imaging array (Kodak KAF-1400) with controlled low fluxes of collimated monoenergetic (17- and 50-MeV) protons and selected heavy ions are presented. The CCD response was measured at several angles of incidence, from normal to 70° off normal, and at several azimuthal angles. The transient response events are recorded and analyzed to infer the effective charge collection depth of the CCD. Selected individual proton-induced events are analyzed for their two-dimensional spatial amplitude, and the results are compared to a charge collection model which included contributions from both the pixel depletion and diffusion volumes for the geometry (pixel size and spacing) and thickness (depletion depth and epitaxial layer thickness) of this CCD

Keywords

CCD image sensors; integrated circuit testing; ion beam effects; proton effects; transient response; 17 MeV; 50 MeV; CCD imaging array; Kodak KAF-1400; azimuthal angles; charge collection depth; charge collection model; collimated monoenergetic protons; depletion depth; epitaxial layer thickness; heavy-ion irradiation; pixel depletion volume; pixel diffusion volume; pixel size; pixel spacing; proton-induced events; transient response; two-dimensional spatial amplitude; Charge coupled devices; Collimators; Geometry; Goniometers; High-resolution imaging; Protons; Semiconductor process modeling; Silicon; Solid modeling; Transient response;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.101204

Filename

101204