DocumentCode :
768802
Title :
Effects of Plasma Exposure on Magnetization of Ion-implanted Bubble Garnet
Author :
Betsui, K. ; Miyashita, T. ; Komenou, K.
Author_Institution :
Fujitsu Ltd.
Volume :
2
Issue :
3
fYear :
1987
fDate :
3/1/1987 12:00:00 AM
Firstpage :
269
Lastpage :
270
Abstract :
Exposure to plasma results in an increase in the change in induced anisotropy field ¿Hk of ion-implanted garnet film. In this work, the change in saturation magnetization was also studied. Ne+ ions were implanted into (YSmLuCa)3 (GeFe)5 O12 film and then exposed to plasma. Whereas a linear decrease in saturation magnetization 4¿Ms with implantation dose was seen, plasma exposure caused an increase which was also proportional to the dose. The temperature dependence of 4¿Ms indicated that plasma exposure raised the Tc, which had fallen from 246°C to 180°C with implantation, back to 198°C. Occlusion of hydrogen in the plasma may be partially responsible for this behavior.
Keywords :
Anisotropic magnetoresistance; Garnets; Hydrogen; Iron; Magnetics; Plasma applications; Plasma immersion ion implantation; Plasma measurements; Plasma temperature; Saturation magnetization;
fLanguage :
English
Journal_Title :
Magnetics in Japan, IEEE Translation Journal on
Publisher :
ieee
ISSN :
0882-4959
Type :
jour
DOI :
10.1109/TJMJ.1987.4549401
Filename :
4549401
Link To Document :
بازگشت