Fast charge collection in GaAs MESFETs

Author

McMorrow, Dale ; Knudson, Alvin R. ; Campbell, Arthur B.

Author_Institution

US Naval Res. Lab., Washington, DC, USA

Volume

37

Issue

6

fYear

1990

fDate

12/1/1990 12:00:00 AM

Firstpage

1902

Lastpage

1908

Abstract

Time-resolved charge collection measurements on 1-μm-gate-length digital GaAs metal-semiconductor field effect transistors (MESFETs) with a variety of energetic ions and picosecond laser pulses exhibit risetimes as short as 25 ps with pulse widths of ~35 ps. Evidence is presented for the presence of three distinct-timescale charge collection processes, with time constants ranging from less than 25 ps to >1 μs. The effects of radiation damage on the charge collection transients are presented, and the use of above-bandgap picosecond laser excitation is demonstrated as a viable alternative to ion excitation for characterization of the dynamical response of high-frequency, radiation-sensitive devices to rapid charge deposition

Keywords

III-V semiconductors; Schottky gate field effect transistors; dynamic response; gallium arsenide; ion beam effects; laser beam effects; semiconductor device testing; 1 micron; 25 ps; GaAs; MESFETs; above-bandgap picosecond laser excitation; charge collection transients; dynamical response; energetic ions; picosecond laser pulses; pulse widths; radiation damage; radiation-sensitive devices; rapid charge deposition; risetimes; time constants; time resolved charge collection; Charge measurement; Current measurement; Energy measurement; FETs; Gallium arsenide; Laser excitation; MESFETs; Optical pulses; Pulse measurements; Space vector pulse width modulation;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.101207

Filename

101207