• DocumentCode
    768816
  • Title

    Effect of Plasma Exposure on Magnetic Properties of Ion-implanted Bubble Garnet Film with Suppression of Growth-induced Anisotropy

  • Author

    Tochiki, Y. ; Betsui, K. ; Komenou, K.

  • Author_Institution
    Fujitsu Labs. Ltd., Atsugi.
  • Volume
    2
  • Issue
    3
  • fYear
    1987
  • fDate
    3/1/1987 12:00:00 AM
  • Firstpage
    271
  • Lastpage
    272
  • Abstract
    When ion-implanted garnet crystal films are exposed to plasma, the change in induced anisotropy field ¿Hk is enhanced. The role of growth-induced anisotropy in this effect was investigated by using annealing at 1000°C to suppress growth-induced anisotropy while studying the effect of Ar plasma exposure on Ne+-implanted films of bubble garnet. The increase in ¿Hk was concluded to be unrelated to any suppression of growth-induced anisotropy, and is thought to originate in an effective increase in the magnetostriction constants.
  • Keywords
    Anisotropic magnetoresistance; Annealing; Argon; Crystals; Garnet films; Magnetic properties; Magnetostriction; Plasma measurements; Plasma properties; Plasma x-ray sources;
  • fLanguage
    English
  • Journal_Title
    Magnetics in Japan, IEEE Translation Journal on
  • Publisher
    ieee
  • ISSN
    0882-4959
  • Type

    jour

  • DOI
    10.1109/TJMJ.1987.4549402
  • Filename
    4549402
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=768816