Effect of Plasma Exposure on Magnetic Properties of Ion-implanted Bubble Garnet Film with Suppression of Growth-induced Anisotropy

When ion-implanted garnet crystal films are exposed to plasma, the change in induced anisotropy field ¿Hk is enhanced. The role of growth-induced anisotropy in this effect was investigated by using annealing at 1000°C to suppress growth-induced anisotropy while studying the effect of Ar plasma exposure on Ne⁺-implanted films of bubble garnet. The increase in ¿Hk was concluded to be unrelated to any suppression of growth-induced anisotropy, and is thought to originate in an effective increase in the magnetostriction constants.