Title :
Pulsed laser-induced charge collection in GaAs MESFETs
Author :
Knudson, A.R. ; Campbell, A.B. ; McMorrow, D. ; Buchner, S. ; Kang, K. ; Weatherford, T. ; Srinivas, V. ; Swartzlander, G.A., Jr. ; Chen, Y.J.
Author_Institution :
US Naval Res. Lab., Washington, DC, USA
fDate :
12/1/1990 12:00:00 AM
Abstract :
Pulsed picosecond lasers with variable wavelength were used to investigate the details of charge collection in GaAs MESFETs. In short gate-length devices, charge collection at the drain may be much larger than at the gate and greater than the charge produced by the laser pulses. The results show that a pulsed laser is very useful in studies of charge collection. Two particularly useful features are the absence of the radiation damage which accompanies ion measurements and the ability to observe visually the point at which charge is being produced in the device
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; laser beam effects; semiconductor device testing; GaAs; MESFETs; charge production; drain charge collection transient; picosecond lasers; pulsed laser induced charge collection; short gate-length devices; Charge measurement; Current measurement; Gallium arsenide; MESFETs; Optical pulses; Performance evaluation; Pulse measurements; Semiconductor lasers; Surface emitting lasers; Wavelength measurement;
Journal_Title :
Nuclear Science, IEEE Transactions on
