Photoinduced Effect on Surface Modes in H2+-Implanted YIG Thin Films

A previous report described the decrease of the surface spin wave resonance field, ¿Hp, with light irradiation of ion-implanted YIG at 77 K. Here the authors describe ¿Hp relaxation as the irradiation is turned on and off, as well as the effect of annealing on ¿Hp for films covered with a sputtered SiO2 layer. The time to saturation of ¿Hp with light stimulation was much longer for annealed samples. Changes in ¿Hp normally accompanying annealing (250°C) were found to be almost absent in films covered with an SiO2 layer.