Title :
A new method for using 252Cf in SEU testing [SRAM]
Author :
Costantine, A. ; Howard, J.W. ; Becker, M. ; Block, R.C. ; Smith, L. S Ted ; Soli, G.A. ; Stauber, M.C.
Author_Institution :
Rensselaer Polytech. Inst., Troy, NY, USA
fDate :
12/1/1990 12:00:00 AM
Abstract :
A system using 252Cf and associated nuclear instrumentation has determined the single-event upset (SEU) cross section versus linear energy transfer (LET) curve for several 2 K×8 static random access memories (SRAMs). The 252Cf fission fragments pass through a thin-film organic scintillator detector (TFD) on the way to the device under test (DUT). The TFD provides energy information for each transiting fragment. Data analysis provides the energy of the individual ion responsible for each SEU; thus, separate upset cross sections can be developed for different energy and mass regions of the californium spectrum. This californium-based device is quite small and fits onto a bench top. It provides a convenient and inexpensive supplement or alternative to accelerator and high-altitude/space SEU testing
Keywords :
CMOS integrated circuits; SRAM chips; integrated circuit testing; ion beam effects; nuclear electronics; scintillation counters; 16 kbit; 252Cf; CMOS circuits; LET; SEU testing; SRAMs; device under test; fission fragments; linear energy transfer; nuclear instrumentation; single-event upset; static random access memories; thin-film organic scintillator detector; upset cross sections; Data analysis; Detectors; Energy exchange; Instruments; Ion accelerators; Life estimation; SRAM chips; Single event upset; Testing; Thin film devices;
Journal_Title :
Nuclear Science, IEEE Transactions on