Single event induced transients in I/O devices: a characterization

Author

Newberry, D.M. ; Kaye, D.H. ; Soli, G.A.

Author_Institution

Control Data Corp., Bloomington, MN, USA

Volume

37

Issue

6

fYear

1990

fDate

12/1/1990 12:00:00 AM

Firstpage

1974

Lastpage

1980

Abstract

The results of single-event upset (SEU) testing performed to evaluate the parametric transients, i.e. amplitude and duration, in several I/O devices, and the impact of these transients are discussed. The failure rate of these devices is dependent on the susceptibility of interconnected devices to the resulting transient change in the output of the I/O device. This failure rate, which is a function of the susceptibility of the interconnected device as well as the SEU response of the I/O device itself, may be significantly different from an upset rate calculated without taking these factors into account. The impact at the system level is discussed by way of an example

Keywords

CMOS integrated circuits; PROM; bipolar integrated circuits; failure analysis; integrated circuit testing; integrated logic circuits; ion beam effects; transients; CMOS logic; I/O devices; LET value; SEU testing; amplitude; bipolar PROM; bipolar logic; duration; failure rate; interconnected device; ion irradiation; parametric transients; single-event upset; upset rate; Connectors; Control systems; Fault tolerant systems; Integrated circuit interconnections; Logic devices; Microelectronics; Propulsion; Redundancy; Satellites; Single event upset;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.101217

Filename

101217