Title :
Single event induced transients in I/O devices: a characterization
Author :
Newberry, D.M. ; Kaye, D.H. ; Soli, G.A.
Author_Institution :
Control Data Corp., Bloomington, MN, USA
fDate :
12/1/1990 12:00:00 AM
Abstract :
The results of single-event upset (SEU) testing performed to evaluate the parametric transients, i.e. amplitude and duration, in several I/O devices, and the impact of these transients are discussed. The failure rate of these devices is dependent on the susceptibility of interconnected devices to the resulting transient change in the output of the I/O device. This failure rate, which is a function of the susceptibility of the interconnected device as well as the SEU response of the I/O device itself, may be significantly different from an upset rate calculated without taking these factors into account. The impact at the system level is discussed by way of an example
Keywords :
CMOS integrated circuits; PROM; bipolar integrated circuits; failure analysis; integrated circuit testing; integrated logic circuits; ion beam effects; transients; CMOS logic; I/O devices; LET value; SEU testing; amplitude; bipolar PROM; bipolar logic; duration; failure rate; interconnected device; ion irradiation; parametric transients; single-event upset; upset rate; Connectors; Control systems; Fault tolerant systems; Integrated circuit interconnections; Logic devices; Microelectronics; Propulsion; Redundancy; Satellites; Single event upset;
Journal_Title :
Nuclear Science, IEEE Transactions on
