Title :
Time-dependent hole and electron trapping effects in SIMOX buried oxides
Author :
Boesch, H. Edwin, Jr. ; Taylor, Thomas L. ; HITE, LARRY R. ; Bailey, Wayne E.
Author_Institution :
Harry Diamond Lab., Adelphi, MD, USA
fDate :
12/1/1990 12:00:00 AM
Abstract :
The back-channel threshold shift associated with the buried oxide layers of separation by implanted oxygen (SIMOX) and zone-melted recrystallization (ZMR) field-effect transistors (FETs) was measured following pulsed irradiation as a function of temperature and back-gate bias using a fast time-resolved I-V measurement technique. The SIMOX FETs showed large initial negative voltage shifts at 0.2 ms after irradiation followed by temperature- and bias-dependent additional negative shifts to 800 s. Analysis and modeling of the results indicated: (1) efficient deep trapping of radiation-generated holes in the bulk of the oxide, (2) substantial initial trapping of radiation-generated electrons in the oxide, and (3) rapid removal of the trapped electrons by a thermal detrapping process. The ZMR FETs showed evidence of substantial trapping of holes alone in the oxide bulk
Keywords :
electron beam effects; electron traps; hole traps; insulated gate field effect transistors; ion implantation; semiconductor device testing; semiconductor-insulator boundaries; FETs; SIMOX buried oxides; SOI mesa FETs; ZMR; back-channel threshold shift; electron irradiation; electron trapping; field-effect transistors; hole trapping; modeling; negative voltage shifts; pulsed irradiation; radiation-generated electrons; radiation-generated holes; thermal detrapping process; time-resolved I-V measurement; zone-melted recrystallization; CMOS technology; Charge carrier processes; Current measurement; Electron traps; FETs; Instruments; Pulse measurements; Silicon on insulator technology; Temperature; Voltage;
Journal_Title :
Nuclear Science, IEEE Transactions on
