DocumentCode :
768931
Title :
370 W output power GaN-FET amplifier for W-CDMA cellular base stations
Author :
Wakejima, A. ; Matsunaga, K. ; Okamoto, Y. ; Ando, Y. ; Nakayama, T. ; Miyamoto, H.
Author_Institution :
R&D Assoc. for Future Electron Devices, NEC Corp., Otsu Shiga, Japan
Volume :
41
Issue :
25
fYear :
2005
Firstpage :
1371
Lastpage :
1372
Abstract :
A single-ended amplifier using small packaged GaN-FETs exhibits a record 2.14 GHz W-CDMA output power. The amplifier, composed of paralleled 48 mm gate periphery FET die, delivers a peak saturated output power of 371 W with a linear gain of 11.2 dB at a drain voltage of 45 V under 2.14 GHz 3GPP W-CDMA signal input. The output power density (output power/package size) of 1.1 W/mm2 is twice as high as that of the existing over 300 W GaAs-FET amplifiers. A low 5 MHz offset ACLR of -36 dBc with a drain efficiency of 24% is also obtained at 8 dB power back off from the saturated output power.
Keywords :
UHF power amplifiers; broadband networks; code division multiple access; field effect transistor circuits; gallium compounds; wide band gap semiconductors; 11.2 dB; 2.14 GHz; 370 W; 371 W; 45 V; 48 mm; GaN; UHF power amplifiers; W-CDMA cellular base stations; power FET amplifier; single-ended amplifier;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:20053407
Filename :
1561762
Link To Document :
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