Title :
A comparison of buried oxide characteristics of single and multiple implant SIMOX and bond and etch back wafers
Author :
Annamalai, N.K. ; Bockman, James F. ; McGruer, N.E. ; Chapski, Joseph
Author_Institution :
Rome Air Dev. Center, Hanscom AFB, MA, USA
fDate :
12/1/1990 12:00:00 AM
Abstract :
The current through the buried oxides of single- and multiple-implant SIMOX and bond and etchback silicon-on-insulator (BESOI) wafers was measured as a function of radiation dose. From these measurements, conductivity and static capacitances are derived. High-frequency capacitances were also measured. Leakage current through the buried oxide of multiple-implant SIMOX is considerably less than that of single-implant SIMOX (more than an order of magnitude). High-frequency and static capacitances, as a function of total dose, were used to study the buried-oxide-top-silicon interface and the buried-oxide-bottom-silicon interface. Multiple implant had fewer interface traps than single implant at prerad and after irradiation
Keywords :
leakage currents; radiation effects; radiation hardening (electronics); semiconductor technology; semiconductor-insulator boundaries; BESOI; SiO2-Si; bond and etch back wafers; bond and etchback, SOI wafers; buried oxide characteristics; conductivity; high-frequency capacitances; interface traps; isolation technologies; leakage current; multiple-implant SIMOX; radiation dose dependence; single-implant SIMOX; static capacitances; Annealing; Capacitance measurement; Capacitors; Current measurement; Etching; Frequency; Implants; MOS devices; Silicon; Wafer bonding;
Journal_Title :
Nuclear Science, IEEE Transactions on
