A comparison of buried oxide characteristics of single and multiple implant SIMOX and bond and etch back wafers

Author

Annamalai, N.K. ; Bockman, James F. ; McGruer, N.E. ; Chapski, Joseph

Author_Institution

Rome Air Dev. Center, Hanscom AFB, MA, USA

Volume

37

Issue

6

fYear

1990

fDate

12/1/1990 12:00:00 AM

Firstpage

2001

Lastpage

2007

Abstract

The current through the buried oxides of single- and multiple-implant SIMOX and bond and etchback silicon-on-insulator (BESOI) wafers was measured as a function of radiation dose. From these measurements, conductivity and static capacitances are derived. High-frequency capacitances were also measured. Leakage current through the buried oxide of multiple-implant SIMOX is considerably less than that of single-implant SIMOX (more than an order of magnitude). High-frequency and static capacitances, as a function of total dose, were used to study the buried-oxide-top-silicon interface and the buried-oxide-bottom-silicon interface. Multiple implant had fewer interface traps than single implant at prerad and after irradiation

Keywords

leakage currents; radiation effects; radiation hardening (electronics); semiconductor technology; semiconductor-insulator boundaries; BESOI; SiO₂-Si; bond and etch back wafers; bond and etchback, SOI wafers; buried oxide characteristics; conductivity; high-frequency capacitances; interface traps; isolation technologies; leakage current; multiple-implant SIMOX; radiation dose dependence; single-implant SIMOX; static capacitances; Annealing; Capacitance measurement; Capacitors; Current measurement; Etching; Frequency; Implants; MOS devices; Silicon; Wafer bonding;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.101221

Filename

101221