Irradiation-induced ESR active defects in SIMOX structures

Irradiation of single-step implanted SIMOX structures by γ-rays to a dose of 1 Mrad(Si) results in a 2.5-fold increase in the density of dangling bonds associated with amorphous silicon in the buried oxide (BOX) and introduces a defect in both single- and multiple-implant structures at a density of (1.1 to 2.2)×10¹² cm^-2. The latter is considered to be an oxygen-related double donor in silicon that becomes ionized upon irradiation. Higher γ-ray dose generates E´ defects in the BOX at a rate which indicates that the BOX may be in densified state. The results demonstrate the existence of defects which have never been observed in conventional Si/SiO₂ structures