Title :
Passive modelocking of InGaAsP/InP laser diode over wide operating temperature range
Author :
Tan, W.K. ; Wong, H.Y. ; Kelly, A.E. ; Sorel, M. ; Marsh, J.H. ; Bryce, A.C.
Author_Institution :
Dept. of Electron. & Electr. Eng., Univ. of Glasgow, UK
Abstract :
The passive modelocked operation of an InGaAsP/InP laser diode, with a novel design of adaptable saturable absorber, up to an operating temperature of 75°C, is reported. To the authors´ best knowledge, this is the first demonstration of high-temperature operation of a passively modelocked laser diode. The effect of the operating temperature on the operating frequency and the tuning range is described.
Keywords :
III-V semiconductors; gallium arsenide; high-temperature techniques; indium compounds; laser mode locking; laser tuning; semiconductor lasers; 75 C; InGaAsP-InP; adaptable saturable absorber; high-temperature operation; laser diode; operating frequency; operating temperature; passive modelocking; tuning range;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20053431
