Radiation tolerant GaAs MESFET with a highly-doped thin active layer grown by OMVPE

Author

Nishiguchi, Masanori ; Hashinaga, Tatsuya ; Nishizawa, Hideaki ; Hayashi, Hideki ; Okazaki, Naoto ; Kitagawa, Michiharu ; Fujino, Takahiro

Author_Institution

Sumitomo Electr. Ind. Ltd., Yokohama, Japan

Volume

37

Issue

6

fYear

1990

fDate

12/1/1990 12:00:00 AM

Firstpage

2071

Lastpage

2075

Abstract

A novel GaAs MESFET structure with high radiation tolerance is proposed. Changes in electrical parameters of a GaAs MESFET as a function of total γ-ray dose were found to be caused mainly by a decrease in the effective carrier concentration in an active layer. The structure was designed from a simulation based on an empirical relationship between the changes of the effective carrier concentration and the total γ-ray dose. It was successfully demonstrated by utilizing a highly doped thin active layer (4×10¹⁸ cm ^-3, 100 Å) grown by organometallic vapor-phase epitaxy (OMVPE). This MESFET can withstand a dose ten times higher [1×10 ⁹ rads(GaAs)] than a conventional one can

Keywords

III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; gamma-ray effects; radiation hardening (electronics); semiconductor technology; vapour phase epitaxial growth; 100 A; 1E9 rad; GaAs MESFET structure; OMVPE; electrical parameters; gamma-ray total dose; high radiation tolerance; highly-doped thin active layer; organometallic vapor-phase epitaxy; radiation tolerant GaAs MESFET; semiconductors; Degradation; Electron traps; Gallium arsenide; MESFETs; Power system reliability; Research and development; Semiconductor devices; Stability; Stress; Temperature measurement;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.101231

Filename

101231