DocumentCode :
769104
Title :
Perpendicular Magnetic Anisotropy in Amorphous TbCo Sputtered Films
Author :
Shimanuki, S. ; Ichihara, K. ; Yasuda, N. ; Ito, K. ; Kon, K.
Author_Institution :
Toshiba R and D Center
Volume :
2
Issue :
4
fYear :
1987
fDate :
4/1/1987 12:00:00 AM
Firstpage :
338
Lastpage :
339
Abstract :
Effects of sputtering conditions on perpendicular magnetic anisotropy in amorphous TbCo films prepared by two target magnetron cosputtering have been studied. The perpendicular magnetic anisotropy of amorphous TbCo films depended strongly on negative substrate bias voltage and Ar gas pressure. TbCo films deposited at zero substrate bias voltage and low Ar gas pressure (2 ~ 5 mtorr) showed a positive uniaxial magnetic anisotropy (Ku) of 3 ~ 4 × 106 erg/cm3 in the range of 13 ~ 31 at% Tb.
Keywords :
Amorphous magnetic materials; Amorphous materials; Argon; Magnetic anisotropy; Magnetic films; Perpendicular magnetic anisotropy; Perpendicular magnetic recording; Sputtering; Substrates; Voltage;
fLanguage :
English
Journal_Title :
Magnetics in Japan, IEEE Translation Journal on
Publisher :
ieee
ISSN :
0882-4959
Type :
jour
DOI :
10.1109/TJMJ.1987.4549432
Filename :
4549432
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=769104
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