Title :
Influence of Sputtering Conditions on Perpendicular Magnetic Anisotropy in GdTbCo Amorphous Films
Author :
Tsutsumi, K. ; Fujii, Y. ; Hashima, K. ; Kurokawa, H. ; Sugahara, H.
Author_Institution :
Materials and Electronic Devices Lab., Mitsubishi Electric Corp.
fDate :
4/1/1987 12:00:00 AM
Abstract :
The effects of Ar pressure on GdTbCo film characteristics without bias voltage were studied. Sample films demonstrated a large perpendicular anisotropy (Ku) which increased with the Tb contraction. In GdCo films, Ku became less negative as the Ar pressure increased, but Ku decreased in films containing Tb. Other results indicated that GdTbCo disks will be easy to manufacture.
Keywords :
Amorphous materials; Anisotropic magnetoresistance; Argon; Helium; Magnetic films; Manufacturing; Perpendicular magnetic anisotropy; Sputtering; Substrates; Voltage;
Journal_Title :
Magnetics in Japan, IEEE Translation Journal on
DOI :
10.1109/TJMJ.1987.4549435
