DocumentCode
76915
Title
Solution-Processed Indium–Zinc-Oxide Thin Film Transistors With High- 
Magnesium Titanium Oxide Dielectric
Author
Zhao Yang ; Haifeng Pu ; Can Cui ; Li Zhang ; Chengyuan Dong ; Qun Zhang
Author_Institution
Dept. of Mater. Sci., Fudan Univ., Shanghai, China
Volume
35
Issue
5
fYear
2014
fDate
May-14
Firstpage
557
Lastpage
559
Abstract
In this letter, magnesium-titanium oxide (MTO) thin films were prepared through a solution-processing method. Variation of permittivity, leakage properties, and optical bandgap of the MTO thin films with different Ti content were investigated. The amorphous indium-zinc oxide thin-film transistors (TFTs) using Mg0.6Ti0.4O as gate dielectric exhibited a small subthreshold swing of 0.32 V/decade, moderate field-effect mobility of 3.41 cm2/Vs, low threshold voltage of -0.9 V, and large ON/OFF current ratio of ~ 6×106. These results demonstrate the potential application of solution-processed MTO thin films as a promising gate dielectric layer in oxide-TFTs.
Keywords
energy gap; high-k dielectric thin films; indium compounds; leakage currents; liquid phase deposition; magnesium compounds; permittivity; semiconductor thin films; semiconductor-insulator boundaries; thin film transistors; InZnO-Mg0.6Ti0.4O; amorphous indium-zinc oxide TFTs; field-effect mobility; gate dielectric layer; high-k magnesium titanium oxide dielectric thin films; leakage properties; on-off current ratio; optical bandgap; permittivity; solution-processed indium-zinc-oxide thin film transistors; threshold voltage; Dielectrics; Leakage currents; Logic gates; Permittivity; Photonic band gap; Thin film transistors; Dielectric layer; indium-zinc-oxide (IZO); indium??zinc-oxide (IZO); magnesium doping; magnesium-titanium-oxide (MTO); magnesium??titanium-oxide (MTO); thin-film transistors (TFTs); thin-film transistors (TFTs).;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2014.2311117
Filename
6797890
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