• DocumentCode
    769191
  • Title

    High performances of InP channel power HEMT at 94 GHz

  • Author

    Medjdoub, F. ; Zaknoune, M. ; Wallart, X. ; Gaquiére, C. ; Theron, D.

  • Author_Institution
    Dept. Hyperfrequences et Semi-conducteurs, UMR-CNRS, Villeneuve d´´Ascq, France
  • Volume
    41
  • Issue
    25
  • fYear
    2005
  • Firstpage
    1406
  • Lastpage
    1408
  • Abstract
    High power performances at 94 GHz using a large bandgap InP channel high electron mobility transistor (HEMT) on InP substrate containing an InP/AlInAs composite barrier are reported. This 0.1 μm gate HEMT exhibits excellent RF characteristics with cutoff frequencies Ft of 105 GHz and Fmag of 340 GHz which represent the highest frequency performances ever reached for an InP channel HEMT. The first power results demonstrated a maximum output power of 200 mW/mm at 2.5 V of drain voltage with 3.8 dB power gain and power added efficiency of 13.7%. This structure is very promising at such frequency.
  • Keywords
    III-V semiconductors; aluminium compounds; indium compounds; millimetre wave field effect transistors; millimetre wave power transistors; power HEMT; 0.1 micron; 105 GHz; 13.7 percent; 2.5 V; 3.8 dB; 340 GHz; 94 GHz; InP-AlInAs; RF characteristics; composite barrier; high power performances; power HEMT;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20053068
  • Filename
    1561785
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=769191