Title :
High performances of InP channel power HEMT at 94 GHz
Author :
Medjdoub, F. ; Zaknoune, M. ; Wallart, X. ; Gaquiére, C. ; Theron, D.
Author_Institution :
Dept. Hyperfrequences et Semi-conducteurs, UMR-CNRS, Villeneuve d´´Ascq, France
Abstract :
High power performances at 94 GHz using a large bandgap InP channel high electron mobility transistor (HEMT) on InP substrate containing an InP/AlInAs composite barrier are reported. This 0.1 μm gate HEMT exhibits excellent RF characteristics with cutoff frequencies Ft of 105 GHz and Fmag of 340 GHz which represent the highest frequency performances ever reached for an InP channel HEMT. The first power results demonstrated a maximum output power of 200 mW/mm at 2.5 V of drain voltage with 3.8 dB power gain and power added efficiency of 13.7%. This structure is very promising at such frequency.
Keywords :
III-V semiconductors; aluminium compounds; indium compounds; millimetre wave field effect transistors; millimetre wave power transistors; power HEMT; 0.1 micron; 105 GHz; 13.7 percent; 2.5 V; 3.8 dB; 340 GHz; 94 GHz; InP-AlInAs; RF characteristics; composite barrier; high power performances; power HEMT;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20053068
