Title :
Low-threshold single-quantum-well InGaAs/GaAs lasers grown by metal-organic chemical vapor deposition on structure substrates
Author :
Frateschi, N.C. ; Osinski, J.S. ; Beyler, C.A. ; Dapkus, P.D.
Author_Institution :
Dept. of Electr. Eng., Univ. of Southern California, Los Angeles, CA, USA
fDate :
3/1/1992 12:00:00 AM
Abstract :
Low-threshold current (as low as 3.0 mA) and high-external efficiency ( approximately=88%) InGaAs/GaAs lasers emitting at 1 mu m under a stable fundamental transverse mode were obtained by using the temperature engineered growth technique for the growth on prepatterned substrates.<>
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser modes; semiconductor growth; semiconductor junction lasers; vapour phase epitaxial growth; 1 micron; 3.0 mA; 88 percent; IR sources; InGaAs-GaAs; high-external efficiency; low-threshold currents; metal-organic chemical vapor deposition; prepatterned substrates; semiconductor diode lasers; semiconductor growth; single-quantum-well; stable fundamental transverse mode; structure substrates; temperature engineered growth technique; Chemical lasers; Fiber lasers; Gallium arsenide; Indium gallium arsenide; Laser modes; Laser stability; Pump lasers; Quantum well lasers; Temperature; Waveguide lasers;
Journal_Title :
Photonics Technology Letters, IEEE
