Low-threshold single-quantum-well InGaAs/GaAs lasers grown by metal-organic chemical vapor deposition on structure substrates

Author

Frateschi, N.C. ; Osinski, J.S. ; Beyler, C.A. ; Dapkus, P.D.

Author_Institution

Dept. of Electr. Eng., Univ. of Southern California, Los Angeles, CA, USA

Volume

4

Issue

3

fYear

1992

fDate

3/1/1992 12:00:00 AM

Firstpage

209

Lastpage

212

Abstract

Low-threshold current (as low as 3.0 mA) and high-external efficiency ( approximately=88%) InGaAs/GaAs lasers emitting at 1 mu m under a stable fundamental transverse mode were obtained by using the temperature engineered growth technique for the growth on prepatterned substrates.<>

Keywords

III-V semiconductors; gallium arsenide; indium compounds; laser modes; semiconductor growth; semiconductor junction lasers; vapour phase epitaxial growth; 1 micron; 3.0 mA; 88 percent; IR sources; InGaAs-GaAs; high-external efficiency; low-threshold currents; metal-organic chemical vapor deposition; prepatterned substrates; semiconductor diode lasers; semiconductor growth; single-quantum-well; stable fundamental transverse mode; structure substrates; temperature engineered growth technique; Chemical lasers; Fiber lasers; Gallium arsenide; Indium gallium arsenide; Laser modes; Laser stability; Pump lasers; Quantum well lasers; Temperature; Waveguide lasers;

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/68.122368

Filename

122368