DocumentCode :
769554
Title :
Effective nonlinear gain in semiconductor lasers
Author :
Duan, Guang-Hua ; Gallion, Philippe ; Agrawal, Govind P.
Author_Institution :
Dept. Commun., Ecole Nat. Superieure des Telecommun., Paris, France
Volume :
4
Issue :
3
fYear :
1992
fDate :
3/1/1992 12:00:00 AM
Firstpage :
218
Lastpage :
220
Abstract :
An effective nonlinear gain is introduced for semiconductor lasers by taking into account the effect of laser structure and the associated distribution of the mode intensity along the cavity length. It should be used in the analysis of laser dynamics and noise in place of the material nonlinear gain parameter. A general expression for the effective nonlinear gain is given by using the Green´s function method. The results obtained for Fabry-Perot and distributed feedback lasers show that the effective nonlinear gain could be considerably enhanced. The exact value of the enhancement factor depends on cavity parameters. Affected by the laser structure, the nonlinear gain has a different power dependence than expected from material considerations alone.<>
Keywords :
Green´s function methods; electron device noise; laser cavity resonators; laser modes; laser theory; nonlinear optics; semiconductor junction lasers; DFB lasers; Fabry-Perot lasers; Green´s function method; cavity length; cavity parameters; diode laser noise; distributed feedback lasers; effective nonlinear gain; enhancement factor; laser dynamics; laser structure; mode intensity; power dependence; semiconductor lasers; Distributed feedback devices; Genetic expression; Green´s function methods; Laser feedback; Laser modes; Laser noise; Optical materials; Semiconductor device noise; Semiconductor lasers; Semiconductor materials;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/68.122371
Filename :
122371
Link To Document :
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