DocumentCode :
769604
Title :
Magnetic Properties of CoTaZr Amorphous Thin Films
Author :
Hayashi, K. ; Hayakawa, M. ; Ochiai, Y. ; Matsuda, H. ; Ishikawa, W. ; Iwasaki, Y. ; Aso, K.
Author_Institution :
Sony Corporation Research Center.
Volume :
2
Issue :
5
fYear :
1987
fDate :
5/1/1987 12:00:00 AM
Firstpage :
444
Lastpage :
445
Abstract :
The effect of the sputtering conditions on the magnetic properties of CoTaZr amorphous films are studied. Varying the input power from 100 to 700 W can vary the Co concentration by as much as 8 at%, or approximately 5 kG when converted to Bs. Varying the bias voltage or argon gas pressure can have similar effects. The permeability of multilayered samples was still inferior to that of single-layer samples, a phenomenon that the authors intend to investigate further.
Keywords :
Amorphous magnetic materials; Amorphous materials; Argon; Electrical resistance measurement; Magnetic films; Magnetic flux; Magnetic properties; Permeability; Sputtering; Voltage;
fLanguage :
English
Journal_Title :
Magnetics in Japan, IEEE Translation Journal on
Publisher :
ieee
ISSN :
0882-4959
Type :
jour
DOI :
10.1109/TJMJ.1987.4549482
Filename :
4549482
Link To Document :
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