DocumentCode
769614
Title
Thickness measurement of a thin-film layer on an anisotropic substrate by phase-sensitive acoustic microscope
Author
Sasaki, Yasuo ; Endo, Tomio ; Yamagishi, Takeshi ; Sakai, Mitsugu
Author_Institution
Olympus Optical Co. Ltd., Tokyo, Japan
Volume
39
Issue
5
fYear
1992
Firstpage
638
Lastpage
642
Abstract
Complex V(z) curves for single thin-film layers on anisotropic substrates are studied both experimentally and theoretically, and the application of V(z) measurement to the determination of film thickness on anisotropic substrates is discussed. Complex V(z) curves for aluminum layers (with thicknesses between 0.5 and 2 mu m) on a silicon wafer have been calculated. The inverse Fourier transform of the V(z) curves, which corresponds to the reflection coefficient, shows sharp changes at critical angles of pseudosurface waves, pseudo-Sezawa waves, and Rayleigh surface waves. These critical angles strongly depend on the thickness. Complex V(z) curves for these specimens have been measured using a phase-sensitive acoustic microscope with a point focus lens at 400 MHz. The critical angles of the surface waves obtained from the measured V(z) curves are in good agreement with those obtained from the calculated V(z) curves. On the basis of this result, it is shown that the V(z) measurement is applicable to the determination of film thickness on an anisotropic substrate.<>
Keywords
acoustic microscopy; aluminium; surface acoustic waves; thickness measurement; 0.5 to 2 micron; 400 MHz; Al layers; Al-Si; Rayleigh surface waves; Si wafer; anisotropic substrate; critical angles; inverse Fourier transform; phase-sensitive acoustic microscope; point focus lens; pseudo-Sezawa waves; pseudosurface waves; reflection coefficient; single thin-film layers; thickness measurement; Acoustic measurements; Acoustic reflection; Aluminum; Anisotropic magnetoresistance; Fourier transforms; Silicon; Substrates; Surface acoustic waves; Thickness measurement; Transistors;
fLanguage
English
Journal_Title
Ultrasonics, Ferroelectrics, and Frequency Control, IEEE Transactions on
Publisher
ieee
ISSN
0885-3010
Type
jour
DOI
10.1109/58.156182
Filename
156182
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