Title :
Locally ion-implanted JFET in an InGaAs/InP p-i-n photodiode layer structure for a monolithically planar integrated receiver OEIC
Author :
Bauer, J.G. ; Albrecht, H. ; Hoffmann, L. ; Römer, D. ; Walter, J.W.
Author_Institution :
Siemens Res. Lab., Munchen, Germany
fDate :
3/1/1992 12:00:00 AM
Abstract :
A novel planar concept for the monolithic integration of a p-i-n photodiode (PD) and a junction field-effect transistor (JFET) is described. In an otherwise optimized InGaAs/InP PD layer sequence, grown by metalorganic vapor-phase epitaxy (MOVPE), a local Si- and Be-ion implantation has been performed to realize a thin n/sup +/-doped channel layer and a buried p-layer for the JFET. JFETs (1.6*290 mu m) have a maximum transconductance of 100 mS/mm and a cutoff frequency of 7 GHz. PDs with 64- mu m diameter show a dark current of 1 nA at -10 V, a responsivity of 1.1 A/W, and a 3-dB bandwidth of 7.6 GHz. The PD-JFET combination exhibits a clear open eye pattern at 200 Mb/s. A receiver sensitivity of -35 dBm for a bit error rate of 10/sup -9/ is estimated.<>
Keywords :
III-V semiconductors; field effect integrated circuits; gallium arsenide; indium compounds; integrated optoelectronics; ion implantation; optical communication equipment; p-i-n diodes; photodiodes; receivers; 1 nA; 1.6 micron; 200 Mbit/s; 290 micron; 64 micron; 7.6 GHz; III-V semiconductor; InGaAs-InP; InGaAs/InP p-i-n photodiode layer structure; InGaAs:Be; InGaAs:Si; MOVPE; bit error rate; buried p-layer; clear open eye pattern; cutoff frequency; dark current; junction field-effect transistor; locally ion implanted JFET; maximum transconductance; metalorganic vapor-phase epitaxy; monolithically planar integrated receiver OEIC; receiver sensitivity; responsivity; thin n/sup +/-doped channel layer; Cutoff frequency; Dark current; Epitaxial growth; Epitaxial layers; FETs; Indium gallium arsenide; Indium phosphide; Monolithic integrated circuits; PIN photodiodes; Transconductance;
Journal_Title :
Photonics Technology Letters, IEEE
