Title :
Mounting-induced strain threshold for the degradation of high-power AlGaAs laser bars
Author :
Xia, R. ; Larkins, E.C. ; Harrison, I. ; Dods, S.R.A. ; Andrianov, A. ; Morgan, J. ; Landesman, J.P.
Author_Institution :
Sch. of Electr. & Electron. Eng., Nottingham Univ., UK
fDate :
7/1/2002 12:00:00 AM
Abstract :
A new detailed approach has been developed, whereby the individual performances of the emitters comprising a laser bar are assessed separately as part of a larger coupled system. The results reveal the existence of a strain threshold, wherefore degradation of the emitter performances is only observed when the local packaging-induced strain is above a certain critical value. This degradation which occurs after aging, is manifested in an increase in the "apparent" threshold current and a decrease in the "apparent" slope efficiency of the individual emitters. This degradation is also revealed by the presence of facet defects as previously reported. These results suggest that measurement and control of packaging-induced strain will allow significant improvement in the degradation behavior of high-power AlGaAs laser bars.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; life testing; optical testing; semiconductor device packaging; semiconductor device testing; semiconductor lasers; AlGaAs; aging; coupled system; critical value; emitter performances; facet defects; high-power AlGaAs laser bars; local packaging-induced strain; mounting-induced strain threshold; packaging-induced strain; slope efficiency; strain threshold; threshold current; Aging; Bars; Capacitive sensors; Degradation; Optical control; Optical coupling; Packaging; Strain control; Strain measurement; Threshold current;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2002.1012376