Title :
A W-band, high-gain, low-noise amplifier using PHEMT MMIC
Author :
Ton, T.N. ; Allen, B. ; Wang, H. ; Dow, G.S. ; Barnachea, E. ; Berenz, J.
Author_Institution :
TWR Electron. & Technol. Div., Redondo Beach, CA, USA
Abstract :
A W-band, high-gain, low-noise amplifier based on pseudomorphic InGaAs-GaAs HEMT devices has been developed. The amplifier has a measured 50-dB stable gain, and 6-dB noise figure from 91 to 95 GHz. The overall amplifier measured 1.068 in*1.281 in*0.72 in and consumes a total DC power of 560 mW. These results demonstrate the highest gain ever achieved at these frequencies.<>
Keywords :
III-V semiconductors; MMIC; field effect integrated circuits; gallium arsenide; high electron mobility transistors; indium compounds; microwave amplifiers; 50 dB; 560 mW; 6 dB; 91 to 95 GHz; DC power consumption; InGaAs-GaAs; MMIC; PHEMT; W-band; high-gain; low-noise amplifier; pseudomorphic HEMT; Assembly; Frequency; HEMTs; Low-noise amplifiers; MMICs; Noise figure; Noise measurement; PHEMTs; Radiofrequency amplifiers; Tuning;
Journal_Title :
Microwave and Guided Wave Letters, IEEE
