Title :
A harmonic injection-locked frequency divider in 0.18-μm SiGe BiCMOS
Author :
Jun-Chau Chien ; Chin-Shen Lin ; Liang-Hung Lu ; Huei Wang ; Yeh, J. ; Chwan-Ying Lee ; Chern, J.
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei
Abstract :
A harmonic injection-locked frequency divider for high-speed applications is presented in this letter. In order to enhance the bandwidth of the high-order frequency division, a positive feedback is employed in the design of the subharmonic mixer loop. The proposed circuit is implemented in a 0.18-mum SiGe BiCMOS process. With a singled-ended super-harmonic input injection of 0dBm, the frequency divider exhibits a locking range of 350MHz (from 59.77 to 60.12GHz) for the divide-by-four frequency division while maintaining an output power of -16.6plusmn 0.5dBm within the entire frequency range. The frequency divider core consumes a dc power of 50mW from a 3.6-V supply voltage
Keywords :
BiCMOS integrated circuits; Ge-Si alloys; frequency dividers; high-speed integrated circuits; 0.18 micron; 3.6 V; 350 MHz; 50 mW; 59.77 to 60.12 GHz; BiCMOS process; SiGe; divide-by-four frequency division; harmonic injection locked frequency divider; high speed applications; positive feedback; subharmonic mixer loop; Bandwidth; BiCMOS integrated circuits; Clocks; Feedback; Frequency conversion; Germanium silicon alloys; Integrated circuit technology; Inverters; Power generation; Silicon germanium; Divider-by-four; high-order frequency division; injection-locked frequency divider; locking range; positive feed- back; subharmonic mixer;
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/LMWC.2006.882383
