The Constraints on Quantum-Dot Semiconductor Optical Amplifiers for Multichannel Amplification

Author

Wong, H.C. ; Ren, G.B. ; Rorison, J.M.

Author_Institution

Dept. of Electr. & Electron. Eng., Bristol Univ.

Volume

18

Issue

20

fYear

2006

Firstpage

2075

Lastpage

2077

Abstract

We report our theoretical studies on the application of InGaAs-GaAs quantum-dot (QD) semiconductor optical amplifier as a single-device multichannel amplifier in the coarse wavelength-division-multiplexing network. Our numerical model exploits the broadened excited states in the QDs to enhance the broadband property of the inhomogeneous QD material

Keywords

III-V semiconductors; excited states; gallium arsenide; indium compounds; optical fibre networks; quantum dot lasers; semiconductor optical amplifiers; wavelength division multiplexing; broadband property; coarse wavelength-division-multiplexing network; excited states; inhomogeneous material; multichannel amplification; multichannel amplifier; quantum-dot amplifiers; quantum-dot material; semiconductor optical amplifiers; single-device amplifier; Channel spacing; Frequency; Nonlinear optics; Optical amplifiers; Optical crosstalk; Optical filters; Quantum dots; Semiconductor optical amplifiers; Stimulated emission; Wavelength division multiplexing; Coarse wavelength-division multiplexing (CWDM); quantum dot (QD); semiconductor optical amplifier (SOA);

fLanguage

English

Journal_Title

Photonics Technology Letters, IEEE

Publisher

ieee

ISSN

1041-1135

Type

jour

DOI

10.1109/LPT.2006.881667

Filename

1704872