Title :
Circuit simulator models for the diode and IGBT with full temperature dependent features
Author :
Palmer, Patrick R. ; Santi, Enrico ; Hudgins, Jerry L. ; Kang, Xiaosong ; Joyce, John C. ; Eng, Poh Yoon
Author_Institution :
Dept. of Eng., Univ. of Cambridge, UK
Abstract :
The problems faced in generating analytical models for the insulated gate bipolar transistor (IGBT) and power diode are devising correct equations and determining realistic boundary conditions, especially for two-dimensional (2-D) features, while ensuring convergence of the models. These issues are addressed in this paper in relation to the temperature dependent modeling of NPT IGBTs and diodes. Simulation and experimental results are presented and compared to validate the modeling approach.
Keywords :
SPICE; circuit simulation; insulated gate bipolar transistors; power semiconductor diodes; semiconductor device models; 1600 V; 75 A; IGBT; PSPICE; analytical models; boundary conditions; circuit simulator models; diode; full temperature dependent features; insulated gate bipolar transistor; models convergence; nonpunch-through; power diode; quasi-2-D semiconductor device models; two-dimensional features; Analytical models; Boundary conditions; Circuit simulation; Convergence; Diodes; Equations; Insulated gate bipolar transistors; Power generation; Temperature dependence; Two dimensional displays;
Journal_Title :
Power Electronics, IEEE Transactions on
DOI :
10.1109/TPEL.2003.816194
