Circuit simulator models for the diode and IGBT with full temperature dependent features

Author

Palmer, Patrick R. ; Santi, Enrico ; Hudgins, Jerry L. ; Kang, Xiaosong ; Joyce, John C. ; Eng, Poh Yoon

Author_Institution

Dept. of Eng., Univ. of Cambridge, UK

Volume

18

Issue

5

fYear

2003

Firstpage

1220

Lastpage

1229

Abstract

The problems faced in generating analytical models for the insulated gate bipolar transistor (IGBT) and power diode are devising correct equations and determining realistic boundary conditions, especially for two-dimensional (2-D) features, while ensuring convergence of the models. These issues are addressed in this paper in relation to the temperature dependent modeling of NPT IGBTs and diodes. Simulation and experimental results are presented and compared to validate the modeling approach.

Keywords

SPICE; circuit simulation; insulated gate bipolar transistors; power semiconductor diodes; semiconductor device models; 1600 V; 75 A; IGBT; PSPICE; analytical models; boundary conditions; circuit simulator models; diode; full temperature dependent features; insulated gate bipolar transistor; models convergence; nonpunch-through; power diode; quasi-2-D semiconductor device models; two-dimensional features; Analytical models; Boundary conditions; Circuit simulation; Convergence; Diodes; Equations; Insulated gate bipolar transistors; Power generation; Temperature dependence; Two dimensional displays;

fLanguage

English

Journal_Title

Power Electronics, IEEE Transactions on

Publisher

ieee

ISSN

0885-8993

Type

jour

DOI

10.1109/TPEL.2003.816194

Filename

1224479