• DocumentCode
    770355
  • Title

    An advanced PWM-switch model including semiconductor device nonlinearities

  • Author

    Ammous, Anis ; Ammous, Kaiçar ; Ayedi, Moez ; Ounajjar, Youssef ; Sellami, Fayçal

  • Author_Institution
    Lab. d´´Electronique et des Technol. de l´´Inf., Power Electron. Group, Sfax, Tunisia
  • Volume
    18
  • Issue
    5
  • fYear
    2003
  • Firstpage
    1230
  • Lastpage
    1237
  • Abstract
    Contrary to the classical ideal averaged models, the introduced averaged model includes the nonlinear effects of the power semiconductor devices. The proposed nonideal pulse width modulated (PWM)-switch model is a useful method for modeling pulse width modulated converters operating in the continuous conduction mode. The main advantages of the proposed averaged model are that it takes into account the nonlinear effects of power devices and make it possible to estimate the dissipated power in the different circuit devices. The proposed model can be applied to bi-directional converters and allows the electrothermal simulations of the power electronic system. A simple technique to evaluate the different static and dynamic parameters of the devices, from manufacturers data sheets or experimentally, is presented.
  • Keywords
    DC-AC power convertors; PWM power convertors; insulated gate bipolar transistors; power semiconductor devices; power semiconductor switches; semiconductor device models; switching convertors; DC-AC converter; IGBT; PWM-switch model; bi-directional converters; dissipated power estimation; electrothermal simulations; ideal averaged models; nonideal pulse width modulated switch model; nonlinear effects; power electronic system; power semiconductor devices; semiconductor device nonlinearities; Bidirectional control; Circuit simulation; Electrothermal effects; Nonlinear dynamical systems; Power electronics; Power semiconductor devices; Power system modeling; Pulse width modulation; Pulse width modulation converters; Semiconductor devices;
  • fLanguage
    English
  • Journal_Title
    Power Electronics, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0885-8993
  • Type

    jour

  • DOI
    10.1109/TPEL.2003.816195
  • Filename
    1224480