• DocumentCode
    770357
  • Title

    Enhancement-Mode n-Channel GaN MOSFETs on p and n-GaN/Sapphire Substrates

  • Author

    Huang, W. ; Khan, T. ; Chow, T.P.

  • Author_Institution
    Center for Power Electron. Syst., Rensselaer Polytech. Inst., Troy, NY
  • Volume
    27
  • Issue
    10
  • fYear
    2006
  • Firstpage
    796
  • Lastpage
    798
  • Abstract
    We report on the demonstration of enhancement-mode n-channel GaN high-voltage MOSFET realized on both p and n-GaN epilayer on sapphire substrates. These MOSFETs, with linear and circular gate geometries, show good dc characteristics with maximum field-effect mobility of 167 cm2/Vmiddots, best reported to date
  • Keywords
    III-V semiconductors; MOCVD; MOSFET; gallium compounds; high-voltage engineering; sapphire; wide band gap semiconductors; GaN-Al2O3; enhancement mode MOSFET; field-effect mobility; metal organic chemical vapor deposition; sapphire; Annealing; Dielectric substrates; Fabrication; Gallium nitride; HEMTs; MODFETs; MOSFETs; Silicon carbide; Thermal conductivity; Voltage; Enhancement-mode; MOSFET; gallium nitride; high field-effect mobility;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2006.883054
  • Filename
    1704903
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=770357