DocumentCode :
770357
Title :
Enhancement-Mode n-Channel GaN MOSFETs on p and n-GaN/Sapphire Substrates
Author :
Huang, W. ; Khan, T. ; Chow, T.P.
Author_Institution :
Center for Power Electron. Syst., Rensselaer Polytech. Inst., Troy, NY
Volume :
27
Issue :
10
fYear :
2006
Firstpage :
796
Lastpage :
798
Abstract :
We report on the demonstration of enhancement-mode n-channel GaN high-voltage MOSFET realized on both p and n-GaN epilayer on sapphire substrates. These MOSFETs, with linear and circular gate geometries, show good dc characteristics with maximum field-effect mobility of 167 cm2/Vmiddots, best reported to date
Keywords :
III-V semiconductors; MOCVD; MOSFET; gallium compounds; high-voltage engineering; sapphire; wide band gap semiconductors; GaN-Al2O3; enhancement mode MOSFET; field-effect mobility; metal organic chemical vapor deposition; sapphire; Annealing; Dielectric substrates; Fabrication; Gallium nitride; HEMTs; MODFETs; MOSFETs; Silicon carbide; Thermal conductivity; Voltage; Enhancement-mode; MOSFET; gallium nitride; high field-effect mobility;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2006.883054
Filename :
1704903
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=770357
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