Title :
SET to RESET Programming in Phase Change Memories
Author :
Karpov, Ilya V. ; Kostylev, Sergey A.
Author_Institution :
Intel Corp., Santa Clara, CA
Abstract :
Experimental data on details of SET (crystalline) to RESET (amorphous) transition are presented for Ge2Sb2Te 5 (GST) nonvolatile memory cell. It is shown that the main source of heat for a SET to RESET transition is the GST bulk and interface regions instead of the contacting electrode. A small-contact-area electrode is used primarily to supply current into and minimize heat loss from the chalcogenide. Increasing bottom contact resistivity offers a scaling path for RESET current with no electrical penalties
Keywords :
antimony compounds; germanium compounds; phase change materials; random-access storage; Ge2Sb2Te5; heat loss; nonvolatile memory cell; ovonic unified memory; phase change memories; reset programming; set programming; Amorphous materials; Contact resistance; Crystallization; Current supplies; Electrodes; Nonvolatile memory; Phase change materials; Phase change memory; Space vector pulse width modulation; Tellurium; Chalcogenide; ovonic unified memory (OUM); phase change memory (PCM);
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2006.882527
