• DocumentCode
    770396
  • Title

    SET to RESET Programming in Phase Change Memories

  • Author

    Karpov, Ilya V. ; Kostylev, Sergey A.

  • Author_Institution
    Intel Corp., Santa Clara, CA
  • Volume
    27
  • Issue
    10
  • fYear
    2006
  • Firstpage
    808
  • Lastpage
    810
  • Abstract
    Experimental data on details of SET (crystalline) to RESET (amorphous) transition are presented for Ge2Sb2Te 5 (GST) nonvolatile memory cell. It is shown that the main source of heat for a SET to RESET transition is the GST bulk and interface regions instead of the contacting electrode. A small-contact-area electrode is used primarily to supply current into and minimize heat loss from the chalcogenide. Increasing bottom contact resistivity offers a scaling path for RESET current with no electrical penalties
  • Keywords
    antimony compounds; germanium compounds; phase change materials; random-access storage; Ge2Sb2Te5; heat loss; nonvolatile memory cell; ovonic unified memory; phase change memories; reset programming; set programming; Amorphous materials; Contact resistance; Crystallization; Current supplies; Electrodes; Nonvolatile memory; Phase change materials; Phase change memory; Space vector pulse width modulation; Tellurium; Chalcogenide; ovonic unified memory (OUM); phase change memory (PCM);
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2006.882527
  • Filename
    1704907
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=770396