DocumentCode :
770488
Title :
430-V 12.4- 
Normally off 4H-SiC Lateral JFET
Normally off 4H-SiC Lateral JFETAuthor :
Su, Ming ; Sheng, Kuang ; Li, Yuzhu ; Zhang, Yongxi ; Wu, Jian ; Zhao, Jian H. ; Zhang, Jianhui ; Li, Larry X.
Author_Institution :
Dept. of Electr. & Comput. Eng., Rutgers Univ., Piscataway, NJ
Volume :
27
Issue :
10
fYear :
2006
Firstpage :
834
Lastpage :
836
Abstract :
This letter reports the experimental demonstration of the first 4H-SiC normally off high-voltage lateral junction field-effect transistor. The design and fabrication of such a device have been investigated. The fabricated device has a vertical channel length of 1.8 mum created by tilted aluminum implantation on the sidewalls of deep trenches and a lateral drift-region length of 5 mum. Normally off operation (VGS=0V) with a blocking voltage Vbr of 430 V has been achieved with a specific on-resistance Ron-sp of 12.4 mOmegamiddotcm2, which is the lowest specific on-resistance for 4H-SiC lateral power switches reported to date, resulting in a Vbr 2/Ron-sp value of 15 MW/cm2. This is among the best Vbr 2/R on-sp figure-of-merit reported to date for 4H-SiC lateral high-voltage devices
Keywords :
junction gate field effect transistors; silicon compounds; wide band gap semiconductors; 1.8 micron; 430 V; 5 micron; SiC; deep trench sidewall; lateral drift-region length; lateral junction field-effect transistor; lateral power switches; normally OFF lateral JFET; tilted aluminum implantation; Fabrication; MOSFETs; Monolithic integrated circuits; Nitrogen; Predictive models; Silicon carbide; System-on-a-chip; Temperature; Two dimensional displays; Voltage; Implantation; junction field-effect transistor (JFET); normally OFF; silicon carbide (SiC); vertical channel;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2006.883057
Filename :
1704915
Link To Document :
