DocumentCode :
770551
Title :
A Novel Bias Temperature Instability Characterization Methodology for High- 
nMOSFETs
nMOSFETsAuthor :
Heh, Dawei ; Choi, Rino ; Young, Chadwin D. ; Lee, Byoung Hun ; Bersuker, Gennadi
Author_Institution :
SEMATECH, Austin, TX
Volume :
27
Issue :
10
fYear :
2006
Firstpage :
849
Lastpage :
851
Abstract :
The power law dependence of the threshold voltage shift (DeltaV th) on stress time for high-k nMOSFETs is studied using a single-pulse Id-Vg technique. The power law exponent value is found to be strongly affected by fast transient charge detrapping during the stress interruption time, which may result in an inaccurate lifetime prediction. A new analysis method that eliminates the impact of the stress interruption time is proposed to evaluate bias temperature instability in n-type high-k devices
Keywords :
MOSFET; dielectric materials; semiconductor device models; bias temperature instability; fast transient charge detrapping; high-k nMOSFET; lifetime prediction; stress interruption time; threshold voltage shift; Charge measurement; Current measurement; High K dielectric materials; High-K gate dielectrics; MOSFETs; Monitoring; Pulse measurements; Stress measurement; Temperature; Time measurement; Lifetime prediction; relaxation; single pulse; transient charge;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2006.882525
Filename :
1704920
Link To Document :
