Title :
A GaAs-based field-modulating plate HFET with improved WCDMA peak-output-power characteristics
Author :
Wakejima, Akio ; Ota, Kazuki ; Matsunaga, Kohji ; Kuzuhara, Masaaki
Author_Institution :
Photonic & Wireless Devices Res. Labs., NEC Corp., Shiga, Japan
Abstract :
A novel GaAs power FET with a field-modulating plate (FP-FET) and operated at a drain bias voltage of 24 V was developed. Regarding the power performance of an FP-FET under wideband code division multiple access (WCDMA) operation, its peak output power significantly degraded in the saturated-output-power region when its FP length was short. However, by introducing a sufficiently large FP length, it was demonstrated that the peak-power degradation can be significantly suppressed. In particular, an FP-FET amplifier fabricated with an FP length of 1.5 μm exhibited no WCDMA peak-power degradation and delivered an output power of 120 W with a linear gain of 14.2 dB at 2.14 GHz.
Keywords :
III-V semiconductors; UHF field effect transistors; UHF power amplifiers; code division multiple access; gallium arsenide; 1.5 micron; 120 W; 14.2 dB; 2.14 GHz; 24 V; FP-FET; GaAs; WCDMA peak-output-power characteristics; drain bias voltage; field-modulating plate HFET; linear gain; saturated-output power region; Degradation; FETs; Gallium arsenide; HEMTs; MODFETs; Multiaccess communication; Power amplifiers; Power generation; Voltage; Wideband;
Journal_Title :
Electron Devices, IEEE Transactions on
DOI :
10.1109/TED.2003.815577
