DocumentCode :
770589
Title :
Depth Profiling of Border Traps in MOSFET With High- 
Gate Dielectric by Charge-Pumping Technique
Gate Dielectric by Charge-Pumping TechniqueAuthor :
Lu, Chun-Yuan ; Chang-Liao, Kuei-Shu ; Tsai, Ping-Hung ; Wang, Tien-Ko
Author_Institution :
Dept. of Eng. & Syst. Sci., Nat. Tsing Hua Univ., Hsinchu
Volume :
27
Issue :
10
fYear :
2006
Firstpage :
859
Lastpage :
862
Abstract :
Charge-pumping (CP) technique is proposed to simultaneously measure the border traps and interface-trap density (Dit). The charge pumped per cycle (Qcp) versus high level (Vh ) of gate pulse for various frequencies was used to observe the behavior of the bulk traps close to the interface as a function of the CP frequency. Evolution on Qcp as a function of frequency was successfully used to determine the depth profile of border-trap density near the high-kappa gate dielectric/Si interface. The influence of border trap in high-kappa dielectric on the Dit measurement can be prevented by an appropriate selection of gate frequency in CP technique
Keywords :
MOSFET; dielectric materials; interface states; MOSFET; border-trap density; charge-pumping; depth profiling; high-k gate dielectric; interface-trap density; Charge pumps; Current measurement; Dielectric measurements; Frequency estimation; Frequency measurement; Hafnium; MOS devices; MOSFET circuits; Pulse measurements; Silicon; Border trap; bulk trap; charge pumped per cycle; charge-pumping (CP) technique; depth profile; high-; interface-trap density;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2006.882563
Filename :
1704923
Link To Document :
