Depth Profiling of Border Traps in MOSFET With High- Gate Dielectric by Charge-Pumping Technique

Charge-pumping (CP) technique is proposed to simultaneously measure the border traps and interface-trap density (D_it). The charge pumped per cycle (Q_cp) versus high level (V_h ) of gate pulse for various frequencies was used to observe the behavior of the bulk traps close to the interface as a function of the CP frequency. Evolution on Q_cp as a function of frequency was successfully used to determine the depth profile of border-trap density near the high-kappa gate dielectric/Si interface. The influence of border trap in high-kappa dielectric on the D_it measurement can be prevented by an appropriate selection of gate frequency in CP technique