CMOS APS crosstalk characterization via a unique submicron scanning system

Author

Shcherback, Igor ; Yadid-Pecht, Orly

Author_Institution

VLSI Syst. Center, Ben Gurion Univ., Sheva, Israel

Volume

50

Issue

9

fYear

2003

Firstpage

1994

Lastpage

1997

Abstract

This work introduces a novel way for CMOS APS crosstalk (CTK) determination and prediction based on our unique Submicron Scanning System (SSS) measurements. It enables the crosstalk magnitude determination, the tracking of its main causes, and can be used as a predictive tool for design optimization. A pronounced crosstalk asymmetry within the array which was revealed by the measurements is analyzed and modeled. The result points out that CMOS APS crosstalk is mostly affected by the specific pixel architecture and the pixels arrangement within the array.

Keywords

CMOS image sensors; crosstalk; integrated circuit measurement; integrated circuit modelling; photodiodes; CMOS APS crosstalk; CMOS active pixel sensor; crosstalk asymmetry; crosstalk characterization; crosstalk magnitude determination; design optimization; pixel architecture; point spread function; predictive tool; submicron scanning system; Annealing; Crosstalk; Electron traps; Grain boundaries; Grain size; Interface states; Semiconductor thin films; Silicon; Thin film transistors; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2003.815594

Filename

1224505