DocumentCode
770697
Title
Diode-End-Pumped Passively CW Mode-Locked Nd:YLF Laser by the LT-In 
Ga 
As Absorber
Author
Pan, Shu-Di ; He, Jing-liang ; Hou, Yu-E ; Fan, Ya-Xian ; Wang, Hui-Tian ; Wang, Yong-Gang ; Ma, Xiao-Yu
Author_Institution
Coll. of Phys. & Electron., Shandong Normal Univ., Ji´´nan
Volume
42
Issue
10
fYear
2006
Firstpage
1097
Lastpage
1100
Abstract
We have demonstrated a self-staring passively continuous-wave mode-locked diode end-pumped Nd:YLF laser with a semiconductor saturable absorber mirror of single-quantum-well (In0.25Ga0.75 As) grown by metal-organic chemical-vapor deposition technique at low temperature. The saturable absorber was used as nonlinear absorber and output coupler simultaneously. Stable pulse duration of 3 ps has been achieved at the repetition rate of 98 MHz. The average output power was 530 mW at 1053 nm under the incident pump power of 10 W, corresponding to the peak power of 1.8 kW and pulse energy of 5.4 nJ
Keywords
III-V semiconductors; MOCVD; gallium arsenide; indium compounds; laser mirrors; laser mode locking; neodymium; optical pulse generation; optical pumping; optical saturable absorption; semiconductor growth; semiconductor quantum wells; solid lasers; yttrium compounds; 1.8 kW; 10 W; 1053 nm; 3 ps; 5.4 nJ; 530 mW; 98 MHz; In0.25Ga0.75As; LiYF4:Nd; Nd:YLF laser; diode-end-pumping; metal-organic chemical-vapor deposition; nonlinear absorber; output coupler; passive mode-locking; semiconductor saturable absorber mirror; stable pulse generation; Fiber lasers; Laser mode locking; Laser theory; Mirrors; Physics; Pulse amplifiers; Pump lasers; Semiconductor diodes; Semiconductor lasers; Solid lasers; Diode-pumped lasers; mode-locked lasers; neodymium-solid-state lasers; semiconductor absorber;
fLanguage
English
Journal_Title
Quantum Electronics, IEEE Journal of
Publisher
ieee
ISSN
0018-9197
Type
jour
DOI
10.1109/JQE.2006.882032
Filename
1704935
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