DocumentCode
770747
Title
Dielectric resolution enhancement coating technology (DiRECT) - a sub-90 nm space and hole patterning technology using 248-nm lithography and plasma-enhanced polymerization
Author
Liang, Ming-Chung ; Tsai, Hsin-Yi ; Chia-Chi Chung ; Hsueh, Cheng-Chen ; Chung, Henry ; Lu, Chih-Yuan
Author_Institution
Technol. Dev. Center, Macronix Int. Co. Ltd., Hsinchu, Taiwan
Volume
24
Issue
9
fYear
2003
Firstpage
562
Lastpage
564
Abstract
A plasma polymerization coating process named Dielectric Resolution Enhancement Coating Technology (DiRECT) is proposed to shrink critical dimensions (CDs) of space and hole patterns. Fluorocarbon plasmas are used as the precursors to coat a polymer layer on the patterned photo-resist. By adding only one processing step, we are able to shrink poly space and contact hole to sub-90 nm-level using 248-nm lithography. The results of our extensive tests have demonstrated the production-worthiness of this technique for its consistent lot-to-lot repeatability, tight within-wafer CD uniformity, and low defect level.
Keywords
plasma materials processing; polymerisation; ultraviolet lithography; 248 nm; 90 nm; CD shrinkage; DUV lithography; DiRECT; contact hole pattern; dielectric resolution enhancement coating technology; fluorocarbon plasma polymerization; photoresist; poly space pattern; Coatings; Dielectrics; Etching; Lithography; Plasma applications; Plasma materials processing; Plasma sources; Polymer films; Resists; Space technology;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/LED.2003.816592
Filename
1224518
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