• DocumentCode
    770747
  • Title

    Dielectric resolution enhancement coating technology (DiRECT) - a sub-90 nm space and hole patterning technology using 248-nm lithography and plasma-enhanced polymerization

  • Author

    Liang, Ming-Chung ; Tsai, Hsin-Yi ; Chia-Chi Chung ; Hsueh, Cheng-Chen ; Chung, Henry ; Lu, Chih-Yuan

  • Author_Institution
    Technol. Dev. Center, Macronix Int. Co. Ltd., Hsinchu, Taiwan
  • Volume
    24
  • Issue
    9
  • fYear
    2003
  • Firstpage
    562
  • Lastpage
    564
  • Abstract
    A plasma polymerization coating process named Dielectric Resolution Enhancement Coating Technology (DiRECT) is proposed to shrink critical dimensions (CDs) of space and hole patterns. Fluorocarbon plasmas are used as the precursors to coat a polymer layer on the patterned photo-resist. By adding only one processing step, we are able to shrink poly space and contact hole to sub-90 nm-level using 248-nm lithography. The results of our extensive tests have demonstrated the production-worthiness of this technique for its consistent lot-to-lot repeatability, tight within-wafer CD uniformity, and low defect level.
  • Keywords
    plasma materials processing; polymerisation; ultraviolet lithography; 248 nm; 90 nm; CD shrinkage; DUV lithography; DiRECT; contact hole pattern; dielectric resolution enhancement coating technology; fluorocarbon plasma polymerization; photoresist; poly space pattern; Coatings; Dielectrics; Etching; Lithography; Plasma applications; Plasma materials processing; Plasma sources; Polymer films; Resists; Space technology;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/LED.2003.816592
  • Filename
    1224518