Title :
Hydrogenated amorphous silicon thin-film transistor arrays fabricated by digital lithography
Author :
Wong, W.S. ; Ready, S.E. ; Jeng-Ping Lu ; Street, R.A.
Author_Institution :
Palo Alto Res. Center, CA, USA
Abstract :
A jet-printed digital-lithographic method, in place of conventional photolithography, was used to fabricate 64 × 64 pixel (300 μm pitch) matrix addressing thin-film transistor (TFT) arrays. The average hydrogenated amorphous silicon TFT device within an array had a threshold voltage of /spl sim/3.5 V, carrier mobility of 0.7 cm2/V/spl middot/s, subthreshold slope of 0.76 V/decade, and an on/off ratio of 10/sup 8/.
Keywords :
amorphous semiconductors; carrier mobility; elemental semiconductors; hydrogen; lithography; silicon; thin film transistors; 3.5 V; 300 micron; 64 pixel; Si:H; active matrix array; carrier mobility; digital lithography; hydrogenated amorphous silicon thin film transistor; jet printing; on/off ratio; subthreshold slope; threshold voltage; Amorphous silicon; Biomedical imaging; Etching; Ink jet printing; Liquid crystal displays; Lithography; Materials processing; Thin film devices; Thin film transistors; Threshold voltage;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2003.815939
