• DocumentCode
    770895
  • Title

    Room temperature operation of type-II GaAsSb/InGaAs quantum well laser on GaAs substrates

  • Author

    Ryu, S.-W. ; Dapkus, P.D.

  • Author_Institution
    Dept. of Electr. Eng., Univ. of Southern California, Los Angeles, CA, USA
  • Volume
    38
  • Issue
    12
  • fYear
    2002
  • fDate
    6/6/2002 12:00:00 AM
  • Firstpage
    564
  • Lastpage
    565
  • Abstract
    A GaAsSb/InGaAs type-II quantum well laser diode on GaAs substrates was demonstrated for the first time. Threshold current density of 610 A/cm2 was obtained from a 1.1 mm-long broad area laser with the emission wavelength of 1.2 μm
  • Keywords
    III-V semiconductors; current density; gallium arsenide; indium compounds; quantum well lasers; 1.1 mm; 1.2 micron; GaAs; GaAsSb-InGaAs-GaAs; GaAsSb/InGaAs/GaAs; broad area laser; emission wavelength; quantum well laser; threshold current density; type-II staggered conduction;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20020410
  • Filename
    1012866
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=770895