DocumentCode :
771083
Title :
Extended-wavelength InGaAs-on-GaAs infrared focal-plane array
Author :
Merken, P. ; Zimmermann, L. ; John, J. ; Borghs, G. ; Van Hoof, C. ; Nemeth, S.
Author_Institution :
MCP Div., IMEC, Leuven, Belgium
Volume :
38
Issue :
12
fYear :
2002
fDate :
6/6/2002 12:00:00 AM
Firstpage :
588
Lastpage :
590
Abstract :
A 320 × 256 element hybrid infrared array is presented which consists of In0.78Ga0.22As photodiodes grown by molecular beam epitaxy on a GaAs substrate. The interconnection yield of the hybrid indium-bump process is above 97%. Electro-optical sensor characteristics are discussed
Keywords :
III-V semiconductors; focal planes; gallium arsenide; indium compounds; semiconductor epitaxial layers; InGaAs-GaAs; electro-optical sensor characteristics; hybrid indium-bump process; hybrid infrared array; infrared focal-plane array; interconnection yield; molecular beam epitaxy;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:20020402
Filename :
1012901
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=771083
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