Title :
Optical switch-on of silicon carbide thyristor
Author :
Levinshtein, M.E. ; Ivanov, P.A. ; Agarwal, A.K. ; Palmour, J.W.
Author_Institution :
Ioffe Inst., Acad. of Sci., St. Petersburg, Russia
fDate :
6/6/2002 12:00:00 AM
Abstract :
Optical switch-on of a silicon carbide thyristor has been demonstrated for the first time. A 2.6 kV 4H-SiC thyristor can be turned on by the light pulse of an ultraviolet laser with wavelength λ=337 nm. The threshold energy of the light pulse, required to turn the thyristor on, is Jth ≃ 0.75 μJ. At light pulse energy of J ~ 15 μJ the thyristor is turned on extremely fast and uniformly over its full area
Keywords :
laser beam applications; photothyristors; semiconductor materials; silicon compounds; wide band gap semiconductors; 0.75 muJ; 15 muJ; 2.6 kV; 337 nm; SiC; full area; light pulse; optical switch-on; pulse energy; threshold energy; thyristor; ultraviolet laser;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20020415
