• DocumentCode
    771184
  • Title

    1.35 μm intersubband transition in InGaAs/AlAsSb single quantum wells

  • Author

    Gopal, A.V. ; Yoshida, H. ; Mozurne, T. ; Simoyama, T. ; Ishikawa, H.

  • Author_Institution
    Femtosecond Technol. Res. Assoc., Tsukuba, Japan
  • Volume
    38
  • Issue
    12
  • fYear
    2002
  • fDate
    6/6/2002 12:00:00 AM
  • Firstpage
    600
  • Lastpage
    602
  • Abstract
    Room temperature, polarisation resolved absorption spectral measurements on InGaAs/AlAs/AlAsSb single quantum wells to report an intersubband absorption peak at a wavelength as short as 1.35 μm are presented. The observed absorption peak covers the communication wavelength range of 1.2 to 1.6 pm
  • Keywords
    III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; semiconductor quantum wells; 1.35 micron; InGaAs-AlAsSb; InGaAs/AlAsSb single quantum well; intersubband transition; optical communication; room temperature polarisation resolved absorption spectra;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20020390
  • Filename
    1012909
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=771184