DocumentCode :
77120
Title :
Statistical Fluctuations in HfOx Resistive-Switching Memory: Part I - Set/Reset Variability
Author :
Ambrogio, Stefano ; Balatti, S. ; Cubeta, A. ; Calderoni, Alessandro ; Ramaswamy, Nirmal ; Ielmini, Daniele
Author_Institution :
Dipt. di Elettron., Inf. e Bioingegneria, Politec. di Milano, Milan, Italy
Volume :
61
Issue :
8
fYear :
2014
fDate :
Aug. 2014
Firstpage :
2912
Lastpage :
2919
Abstract :
Resistive switching memory (RRAM) relies on the voltage-driven formation/disruption of a conductive filament (CF) across a thin insulating layer. Due to the 1-D structure of the CF and discrete nature of defects, the set and reset states of the memory device generally display statistical variability from cycle to cycle. For projecting cell downscaling and designing improved programming operations, the variability as a function of the operation parameters, such as the maximum current in the set process and maximum voltage in the reset process, need to be evaluated and understood. This paper addresses set/reset variability, presenting statistical data for HfOx-based RRAM and introducing a physics-based Monte Carlo model for switching statistics. The model can predict the distribution of the set state as a function of the compliance (maximum) current during set and distribution of the reset state as a function of the stop (maximum) voltage during reset. Numerical modeling results are finally presented to provide additional insight into discrete fluctuation events.
Keywords :
Monte Carlo methods; hafnium compounds; insulating thin films; random-access storage; statistical distributions; CF 1-D structure; HfOx; RRAM; cell designing; cell downscaling; conductive filament; defect discrete nature; discrete fluctuation events; physics-based Monte Carlo model; programming operations; reset state distribution; resistive-switching memory; set state distribution; set-reset variability; statistical fluctuations; statistical variability; switching statistics; thin insulating layer; voltage-driven formation-disruption; Analytical models; Hafnium compounds; Integrated circuit modeling; Numerical models; Resistance; Switches; Noise fluctuations; random telegraph noise (RTN); resistive switching memory (RRAM); resistive switching memory (RRAM).;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/TED.2014.2330200
Filename :
6847211
Link To Document :
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