Title :
Switching behaviour of GaN-based HFETs: thermal and electronic transients
Author :
Kohn, E. ; Daumiller, I. ; Kunze, M. ; Van Nostrand, J. ; Sewell, I. ; Jenkins, T.
Author_Institution :
Dept. of Electron Devices & Circuits, Ulm Univ., Germany
fDate :
6/6/2002 12:00:00 AM
Abstract :
Switching GaN-based devices from a quiescent drain bias point in pinch-off to an open channel condition such as in pulsed power operation will cause thermal transients due to self-heating and electronic transients owing to charge storage effects with opposite gradients. The superposition of both effects may result in a complex transient behaviour or even cancellation
Keywords :
III-V semiconductors; field effect transistor switches; gallium compounds; junction gate field effect transistors; power field effect transistors; transients; wide band gap semiconductors; GaN; GaN HFET; charge storage; electronic transient; pulsed power operation; self-heating; switching characteristics; thermal transient;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20020417
