Title :
Recessed-gate AlGaAs-InGaAs-GaAs pseudomorphic HEMT with Si-planar-doped etch stop layer
Author :
Lan, W.H. ; Lin, W.J. ; Peng, C.K. ; Chen, S.S. ; Tu, S.L.
Author_Institution :
Mater. Res. & Dev. Center, Chung Shan Inst. of Sci. & Technol., Lung-Tan, Taiwan
fDate :
3/30/1995 12:00:00 AM
Abstract :
An improved slot etch technique based on an Si planar doped layer has been applied to gate recessing in the fabrication of AlGaAs/InGaAs/GaAs pseudomorphic high electron mobility transistors (HEMTs). The devices exhibited comparable gm with much better breakdown and leakage behaviour than conventional pseudomorphic HEMT devices
Keywords :
III-V semiconductors; aluminium compounds; electric breakdown; etching; gallium arsenide; high electron mobility transistors; indium compounds; leakage currents; AlGaAs; AlGaAs-InGaAs-GaAs; Si; Si planar doped layer; breakdown; etch stop layer; fabrication; gate recessing; high electron mobility transistors; leakage behaviour; pseudomorphic HEMT; slot etch technique;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19950374
