High-breakdown AlGaAs/InGaAs/GaAs PHEMT with tellurium doping

Author

Nguyen, N.X. ; Jiang, W.-N. ; Baumann, K.A. ; Mishra, U.K.

Author_Institution

Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA

Volume

31

Issue

7

fYear

1995

fDate

3/30/1995 12:00:00 AM

Firstpage

586

Lastpage

588

Abstract

The authors report the fabrication and characterisation of an Al _0.43Ga_0.57As/In_0.2Ga_0.8As/GaAs pseudomorphic HEMT (PHEMT) with high channel conductivity grown by solid source MBE. The high conductivity of the channel is a direct consequence of the high sheet charge and high mobility that has recently been obtained by using tellurium as the n-type dopant in 43% AlGaAs. The device characteristics reflect the resulting reduction in the parasitic resistances of the high channel conductivity. Microwave measurements yield a short-circuit current gain cutoff frequency f_T of 11 GHz and maximum oscillation frequency f_max of 25 GHz. A high gate-drain breakdown voltage of 26 V along with a maximum drain current density of 400 mA/mm obtained in the device illustrate the applicability of this technology in microwave power field effect transistors

Keywords

III-V semiconductors; aluminium compounds; electric breakdown; gallium arsenide; indium compounds; microwave field effect transistors; microwave power transistors; molecular beam epitaxial growth; power HEMT; tellurium; 11 GHz; 25 GHz; 26 V; Al_0.43Ga_0.57As-In_0.2Ga_0.8As-GaAs; Te doping; characterisation; fabrication; gate-drain breakdown voltage; high channel conductivity; high-breakdown PHEMT; microwave power FETs; n-type dopant; parasitic resistances; pseudomorphic HEMT; solid source MBE;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:19950385

Filename

381781