Title :
High efficiency single pulse doped Al0.60In0.40 As/GaInAs/InP HEMTs for Q-band power applications
Author :
Hur, K.Y. ; McTaggart, R.A. ; Ventresca, M.P. ; Wohlert, R. ; Hoke, W.E. ; Lemonias, P.J. ; Kazior, T.E. ; Aucoin, L.M.
Author_Institution :
Adv. Device Center, Raytheon Co., Lexington, MA, USA
fDate :
3/30/1995 12:00:00 AM
Abstract :
Single pulse doped, 0.2 μm-gate Al0.60In0.40 As/GaInAs/InP HEMTs have been fabricated and characterised. The complete process sequence for the HEMTs includes SiNx passivation and dry etched via hole fabrication. Power measurements at 44 GHz on a 10×60 μm2 device yielded 225 mW output power, 5 dB associated gain, and 39% power added efficiency. The results indicate that the single pulse doped InP-based HEMTs are suitable for high power applications at Q-band
Keywords :
III-V semiconductors; aluminium compounds; doping profiles; equivalent circuits; etching; gallium arsenide; indium compounds; millimetre wave field effect transistors; passivation; power HEMT; semiconductor device models; 0.2 micron; 225 mW; 39 percent; 44 GHz; 5 dB; Al0.60In0.40As-GaInAs-InP; EHF; MM-wave device; Q-band power applications; SiNx passivation; dry etched via hole fabrication; high efficiency operation; power HEMT; single pulse doped HEMT;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19950399
