Title :
Effect of proton isolation on DC and RF performance of GaAs planar doped barrier diodes
Author :
Hutchinson, S. ; Carr, M. ; Gwilliam, R. ; Kelly, M.J. ; Sealy, B.J.
fDate :
3/30/1995 12:00:00 AM
Abstract :
Planar doped barrier (PDB) diodes have been fabricated using both mesa and proton implant isolation. Comparative measurements of DC characteristics, RF noise figure and tangential sensitivity indicate that proton implant isolation gives devices of favourable performance following annealing at 290°C for 20 min, with the advantage of a planar process
Keywords :
III-V semiconductors; annealing; gallium arsenide; ion implantation; isolation technology; microwave diodes; proton effects; semiconductor device noise; 20 min; 290 C; DC characteristics; GaAs; RF noise figure; RF performance; SHF; annealing; microwave performance; planar doped barrier diodes; proton implant isolation; tangential sensitivity;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19950401
