Title :
140 GHz GaAs double-Read IMPATT diodes
Author :
Tschernitz, M. ; Freyer, J.
Author_Institution :
Lehrstuhl fur Allgemeine Elektrotechnik und Angewandte Elektronik, Munchen, Germany
fDate :
3/30/1995 12:00:00 AM
Abstract :
CW GaAs double-Read IMPATT diodes for D-band frequencies are designed and tested. For reproducible RF impedance matching, the module encapsulation technique is applied. Ohmic losses of the active device are reduced by a titanium-Schottky contact instead of an alloyed ohmic n +-contact. At 144 GHz 100 mW RF power with a conversion efficiency of 5% is realised
Keywords :
III-V semiconductors; IMPATT diodes; encapsulation; gallium arsenide; millimetre wave diodes; semiconductor device packaging; 100 mW; 140 GHz; 5 percent; CW device; D-band frequencies; EHF; GaAs; MM-wave diodes; RF impedance matching; Ti; Ti-Schottky contact; double-Read IMPATT diodes; module encapsulation technique; ohmic losses;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19950390
