DocumentCode
771332
Title
140 GHz GaAs double-Read IMPATT diodes
Author
Tschernitz, M. ; Freyer, J.
Author_Institution
Lehrstuhl fur Allgemeine Elektrotechnik und Angewandte Elektronik, Munchen, Germany
Volume
31
Issue
7
fYear
1995
fDate
3/30/1995 12:00:00 AM
Firstpage
582
Lastpage
583
Abstract
CW GaAs double-Read IMPATT diodes for D-band frequencies are designed and tested. For reproducible RF impedance matching, the module encapsulation technique is applied. Ohmic losses of the active device are reduced by a titanium-Schottky contact instead of an alloyed ohmic n +-contact. At 144 GHz 100 mW RF power with a conversion efficiency of 5% is realised
Keywords
III-V semiconductors; IMPATT diodes; encapsulation; gallium arsenide; millimetre wave diodes; semiconductor device packaging; 100 mW; 140 GHz; 5 percent; CW device; D-band frequencies; EHF; GaAs; MM-wave diodes; RF impedance matching; Ti; Ti-Schottky contact; double-Read IMPATT diodes; module encapsulation technique; ohmic losses;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19950390
Filename
381784
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